Precipitation of Vanadium Carbide on Stacking Faults

On the energy of terminated stacking faults

The equilibrium of dissociated dislocations is discussed in terms of intrinsic material properties such as the ideal stacking fault energy (ideal SFE) and the stacking fault (SF) strain. The ideal SFE is de® ned as the energy per unit area of an in® nitely extendedSF in an ideal in® nite crystal. The e€ ective SFE is de® ned as the energy per unit area of a terminated SF. The terminated SF is a...

A new type of quantum wells: stacking faults in silicon carbide

We report on a new type of quantum wells with the width as thin as 10 Å, which are composed of SiC only, and consequently have ideal interfaces. These quantum wells are actually stacking faults in SiC. Certain types of stacking faults in SiC polytypes create small 3C-like regions, where the stacking sequences along the c-axis become locally cubic in the hexagonal host crystals. Since the conduc...

Stacking faults and partial dislocations in graphene

We investigate two mechanisms of crystallographic slip in graphene, corresponding to glide and shuffle generalized stacking faults (GSF), and compute their -curves using Sandia National Laboratories Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS). We find evidence of metastable partial dislocations for the glide GSF only. The computed values of the stable and unstable stackin...

Shockley-Frank stacking faults in 6H-SiC

Stacking Faults in Co-Alloy Longitudinal Media

Stacking faults in CoCrTa/Cr, CoCrPt/NiAl, and CoCrPt/Cr/NiAl films have been studied by electron diffraction. Interfacial lattice match and epitaxial growth play important roles in reducing the stacking fault density. It is found that the bicrystal media has large stacking fault densities. In the unicrystal media case, when good epitaxy between magnetic layer and underlayer cannot be achieved,...